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Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance...
Sensing and imaging at millimeter-wave and THz frequencies is promising for a wide range of applications, including security, industrial control, healthcare, and scientific metrology. The development of high-sensitivity, low noise detectors based on interband tunneling in III-V heterostructure devices, and their integration into subsystems is promising for realizing the potential of these applications...
We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes...
This paper presents a nanosensor with an “inter-sheet” configuration formed by making electrical contacts on different atomic sheets of a bilayer structured graphene to expose the inter-sheet effects. An oxygen plasma etching (OPE) technique is developed to tailor the shape and number of layers of a graphene flake. Both “intra-sheet” and “inter-sheet” structured graphene sensors on either separated...
We have developed a simple, manageable, and self-organized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance...
Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (~10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance...
Metal-insulator-semiconductors structures (MIS) with a layer of silicon nanocrystals embedded within two SiO2 layers are fabricated by using plasma enhanced chemical vapor deposition. By using current-voltage (I-V) measurements with different sweep rates, we study the mechanism of electrons and holes charging/discharging characteristic of the MIS structures. Distinct current peaks duo to electrons...
We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n+ BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement...
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