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The microwave noise is used for experimental investigation of power dissipation in the channels for heterostructure field-effect transistors (HFETs). The problem is treated in terms of the hot-electron energy relaxation and the hot-phonon effect. The energy relaxation time and the hot-phonon lifetime are estimated for the GaN-based 2DEG channels at different electron densities, and the results are...
Cavity polaritons which are the elementary optical excitations in semiconductor microcavities may be viewed as a superposition of excitons and cavity photons. The major feature of cavity polariton technology centers on large and unique optical nonlinearities which would lead to a new class of optical devices such as polariton lasers exhibiting very low thresholds and polariton parametric amplifiers...
Hot-electron noise measurements at a 38.5 GHz frequency were used for extraction of hot-electron energy relaxation time in a ZnO/Mg0.38Zn0.62O/ZnO channel with a two-dimensional electron gas (2DEG). The relaxation time of ∼55 fs was obtained at a 2DEG density of ∼ 5.5 × 1012 cm−2. The ultrafast relaxation took place in the vicinity of LO-phonon- plasmon resonance. The results suggest that the power...
Experimental data and Monte-Carlo modeling of hot-electron fluctuations are used for investigation of hot-electron energy relaxation in donor-doped bulk wurtzite ZnO and GaN subjected to a pulsed dc. The extracted electron energy relaxation time depends on the electron density. The experimental value of 0.84 ps is obtained at 5.5×1017 cm−3 in a reasonably good agreement with the results reported from...
This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap...
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