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High-Q performance in microcavities relies upon use of low absorption dielectrics and creation of smooth dielectric interfaces. For chip-compatible devices, silica has the lowest intrinsic material loss [1]. Microtoroid resonators combine this low material loss with a reflow technique in which surface tension is used to smooth lithographic and etch-related blemishes [2]. At the same time, reflow smoothing...
Using a wet etch process, optical resonators with quality factor as high as 875 million are demonstrated. These silicon-chip-based devices are fabricated without reflow, thereby expanding the range of integration opportunities and possible applications.
Optical resonators with Q values of nearly 1 billion are demonstrated, the highest for any chip-based devices. Fabrication uses only standard semiconductor processes, enabling precise size control and access to microwave-rate free-spectral-range operation.
In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 mum. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance...
We performed an AlGaN/GaN Schottky barrier diode (SBD) with a high breakdown voltage of over 1000V on Si (111) substrate. An AlGaN/GaN heterostructure without any crack was realized on a Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). We also fabricated an AlGaN/GaN heterojunction field effect transistor (HFET) using an AlGaN/GaN heterostructure on a Si (111) substrate....
MEMS components failure often happens where environment effects, such as shock, vibration, and temperature cycles. In this paper, the reliability of surfaces micro-machined polycrystalline silicon micro-cantilevers under shock loads was discussed. Using interference theory of stress and strength in the mechanical field, the reliability model was presented and it can predict the probability of the...
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