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There are significant challenges in obtaining a controlled and consistent remaining silicon thickness (RST) above through silicon vias (TSVs) because of the need to support the thin device wafer, which will often be thinned to less than 100 microns during grinding, by bonding it to a full thickness support wafer made of either silicon or glass. Because grinding systems tend to grind flat surfaces,...
As semiconductor devices become smaller and smaller, to keep up with Moore's law, their manufacturing cost increases. Transistors have been continuing to scale and improve in performance. However, the performance improvement gained by scaling is gradually becoming insignificant compared to the negative effects of the interconnect scaling. This had been already predicted by Bohr et al. in 1995 [1]...
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