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In this paper we discuss the numerous metrology and inspection challenges that need to be overcome to really have high volume manufacturing of 3D integrated chips. The key metrology and inspections issues are addressed module wise. We start with the TSV module then move on to the wafer bonding and thinning module. This is followed by the bumping module, de-bonding module and finally we finish with...
As semiconductor devices become smaller and smaller, to keep up with Moore's law, their manufacturing cost increases. Transistors have been continuing to scale and improve in performance. However, the performance improvement gained by scaling is gradually becoming insignificant compared to the negative effects of the interconnect scaling. This had been already predicted by Bohr et al. in 1995 [1]...
New challenges for wafer metrology solutions have evolved with 3D-IC manufacturing technology. 3D-IC technology allows stacking single chips, electrically connecting them in the vertical direction, and then forming a chip structure with significant advantages over traditional chips. Wafer level 3D integration is a system level architecture in which multiple layers of planar devices are stacked and...
Spacer defined double patterning (SDDP) enables further pitch scaling using 193nm immersion lithography. This work aims to design and generate 20nm half pitch (HP) back-end-of-line test structures for single damascene metallization using SDDP with a 3-mask flow. We demonstrated patterning and metallization of 20nm HP trenches in silicon oxide with TiN metal hard mask (MHM).
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