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This paper describes a systematic approach to design FPGA package for current carrying capability. As we examine silicon, interposer, and package, the profound challenge is found to meet the lifetime of high power device against the greater chance of failures owing to worsen electro-migration in every interconnect level. Our approach consists of practical methodologies to estimate current distribution...
We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial...
We propose a novel hybrid bonding technology with a high stacking yield using ultra-high density Cu nano-pillar (CNP) for exascale 2.5D/3D integration. To solve the critical issues of a current standard hybrid bonding technology, we developed scaled electrodes with slightly extruded structure and unique adhesive layer of anisotropic conductive film composed of ultra-high density CNP. Test element...
Silicon interposer minimizes CTE mismatch between the chip and copper filled TSV interposer resulting in high reliability micro bumps. Furthermore, providing high wiring density interconnections and improved electrical performance are the reasons TSV interposer has emerged as a good solution and getting too much industry attention. Several DOEs and design/material optimizations were performed in order...
For the last few decades semiconductor industry has been following Moore Law effectively, which has resulted in significant miniaturization of transistors and on chip logic circuitry. Below the 28nm node, as design complexity of the IC (Integrated Circuits) increases, cost and risk associated with these designs are becoming prohibitive for many companies. Three dimensions (3D) die stacking methodology...
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