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This work presents an ultra-low voltage SRAM read frequency boost circuit developed in 65nm to cover the lack of reliable sense amplifiers. This circuit enables full swing read speed-up and bitline leakage compensation from 1.2V to 0.42V. Embedded in a 65nm 32kb 10T SRAM, it offers 10% frequency gain and 10-to-90% leakage energy reduction from nominal to ultra-low voltage supply.
This paper shows alpha experimental Soft Error Rate characterization of several standard and hardened Flip-Flop architectures processed in a 32 nm technology. It showsthe effecton the alpha Soft Error Rateof experimental parameters such as algorithm (static vs.kdynamic), data filling the register, etc. 12 data patterns onmore than 5Flip-Floptypes(including DICE-like design)are reported in this articlein...
A new proprietary Monte-Carlo simulation code dedicated to the heavy-ion cross-section prediction has been developed. The code is based on diffusion-collection equations taking into account recombination processes, considering an improved drain strike model, and new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations...
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