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Incorporated with the annealing-induced source/drain (S/D), elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) was proposed to provide an etch-stop (ES) layer while retain a small device size for high-resolution displays, which could not be combined in conventional TFT architectures. The “defect-populated” S/D and “defect-free” channel enabled the high performance metrics: a competitive...
Elevated-metal metal-oxide (EMMO) thin-film transistor (TFT), an alternative device architecture that provides an inherent etch-stop (ES) layer while retaining a small device footprint, is described. By comparing the layout efficiency, performance and reliability of an EMMO and a conventional ES TFT, the superiority of the former is established.
Focusing on polarization matrix optics in many forms, this book includes coverage of a wide range of methods which have been applied to LCD modeling, ranging from the simple Jones matrix method to elaborate and high accuracy algorithms suitable for off-axis optics. Researchers and scientists are constantly striving for improved performance, faster response times, wide viewing angles, improved colour...
Anomalous device degradation behavior of p-type polycrystalline silicon thin film transistors under negative gate bias stress is observed. In the first stage, negative gate bias instability dominates, resulting in negative threshold voltage (Vth) shift while in the second stage, negative charge generation induced by hot electrons happens, giving rise to positive Vth shift.
Displays are indispensable in our daily life. It is an integral part of the information intensive society and a conduit to the information superhighway. Presently liquid crystal displays (LCD) are the dominant technology. All kinds of high quality and high definition LCDs are available as computer monitors and flat panel televisions. What lies ahead? Will LCD be replaced by another technology? When...
Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built...
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with metal-replaced source and drain regions have been fabricated and characterized. Several technological schemes for replacing poly-Si with aluminum have been investigated and the relative merits of each are compared.
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