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This paper reports on an extensive analysis of the breakdown of GaN-based Schottky-gated HEMTs submitted to high-voltage stress. The analysis was carried out on transistors with different lengths of the drain-side gate-head ($L_{\mathrm {GH}}$ ), corresponding to different levels of electric field across the SiN passivation. Based on dc measurements, 2-D simulations, and optical analysis, we demonstrate...
A new methodology is presented that directly extracts the location and amount of trapped charge in GaN HEMTs by making use of a special test structure with an additional sense node in-between the gate and drain. The technique is validated on three wafer types: one for which trapping predominantly occurs in the GaN epitaxy, one with both epitaxy trapping and surface charge injection, and one for our...
The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters, which have been calculated, depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power...
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 mum2. Record NMOS/PMOS drive currents of 1000/575 muA/mum, respectively, have been achieved at 1 nA/mum off-current and 1.1 V Vdd with a low cost process. With this high performance transistor,...
Novel CMOS device is proposed as a biochemical sensor. We modified the basic architecture of an extended floating-gate field-effect transistor (FET) to be suited for VLSI applications. The FET has a floating-gate that is umbrella-shaped (UGFET), maximizing its charge sensing area in a much reduced transistor area. Compared to previous extended floating-gate structures, the UGFET shows improved scalability...
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