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A new rational quartic interpolating spline based on function values is constructed. The rational quartic interpolating spline curves have simple and explicit representation with parameters. The monotonicity-preserving, C2 continuity and boundedness of rational quartic interpolating spline curves are confirmed. Function value control and derivative value control of rational quartic interpolation spline...
This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along...
Rotary kilns are widely used in chemical and metallurgical industries. The movement of the solids through the kiln determines greatly the product quality. However, online monitoring of the solids movement is rather difficult due to the hostile running environment of the kiln. In this paper, the research and progresses on monitoring of solid movement are summarized. Several issues associated with model-based...
Brachytherapy is a validate treatment for certain stage,prostate cancer.Large deformation characteristic of soft tissue and force loaded on the tip of insertion needle will cause some unexpectable results, such as imprecise implant of radioactive seeds and extra injury to other tissues. Apparently, improved implant accuracy can not only improve the local control but also reduce global toxicity. As...
We developed a 3D parallel full band Monte Carlo simulator for semiconductor devices. This enables us to simulate 3D devices on high performance multiprocessor machines. By utilizing the JASMIN software package, parallel execution issues such as processors communication, grid partitioning and load balancing are handled easily and efficiently. The 3D MC simulator is validated by comparing its results...
Summary form only given. Through full 3D simulation, we evaluate the impact of gate LER mainly focuses on device parameters including SS, DIBL and Ioff. The variation of the device performance increases when rms amplitude or correlation length increases. Also our results show that gate LER become an urgent issue when the channel length decreases into sub-30nm.
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