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The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature...
We have investigated the effects of surface passivation thickness on the electrical performance of Al-GaN/GaN HEMTs with slant field plates. It is found that the existence of the silicon nitride passivation layer helps to improve the DC characteristics of the devices in terms of the lower drain current collapse, higher maximum DC transconductance, and higher maximum drain current. RF wise, the devices...
Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device. Similarly, the maximum drain current is 520 mA/mm and trasconductance is 183 mS/mm, which is the record estimation for enhancement-mode (e-mode) device...
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