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Our 3D stacked CMOS image sensor (CIS) has an ideal global shutter function with 16 million pixels and 4 million micro-bump interconnections placed at a 7.6-εm pitch between two silicon substrates, achieving interconnections with very low resistance. We confirmed the reliability of our 3D stacked interconnection technology by conducting reliability tests, which included heat cycle tests and high temperature...
We have developed a 3-D-stacked 16-Mpixel, 3.8-$\mu \text{m}$ pitch, and global shutter (GS) CMOS image sensor with a 2-Mpixel 10 000-frames/s high-speed image-capturing mode, with four million reliable microbump interconnections. This sensor consists of a photodiode (PD) substrate and an in-pixel storage node substrate. The four PDs in the unit pixel circuit on the top substrate share one microbump...
A 16Mpixel 3D stacked CMOS image sensor with pixel level interconnections using 4,008,960 micro bumps at a 7.6μm pitch, which set no layout restriction and causes no harm to sensor characteristics, was developed to achieve both a 16Mpixel global-shutter mode with a −180dB PLS and 2Mpixel 10000fps high speed image capturing mode.
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