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In this work, the bridge imaging and the reliability of surface-micromachined capacitive RF MEMS switches in III-V technology are presented. A low cost scanning technique allowed us to image the shape of the moveable bridge with a micrometer spatial resolution, thus quantitatively valuating its lowering as a function of the applied voltage. The reliability of the switches was tested under the application...
In this paper, the reliability of shunt capacitive radio frequency microelectromechanical systems switches developed on GaAs substrate using a III–V technology fabrication process, which is fully compatible with standard monolithic microwave integrated circuit fabrication, is investigated. A comprehensive cycling test is carried out under the application of different unipolar and bipolar polarization...
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