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Thin films of Bi2Sr2CaCu2O8 (Bi-2212) with the non- $c$-axis (117) orientation were grown by MOCVD on (110) LaAlO3 single crystal substrate. XRD $\theta - 2\theta$ scans show that films contain also (119) and (011)Bi-2212 impurity grains. We propose and report characterization of the non- $c$-axis films by XRD $\varphi - \psi$ scans. By this approach, the assumed theoretical film–substrate relationship...
We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface...
The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field, was evaluated. The TFET was fabricated by inserting a parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit...
One of the biggest challenges for the VLSI circuits with 20-nm-technology nodes and beyond is to overcome the issue of a catastrophic increase in power dissipation of the circuit due to short channel effects (SCEs). Fortunately, double-gate FinFETs have a promising potential to overcome this issue due to their superior SCE immunity even with an undoped channel thanks to the 3D structure. This paper...
Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200 GHz and 300 GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177- 235 GHz at room temperature with bias current of 300-550 mA (duty 5 %).
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