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This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the...
The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field, was evaluated. The TFET was fabricated by inserting a parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit...
This paper, for the first time, shows that the work-function variation (WFV) in emerging metal-gate devices results in significant fluctuation in the gate-oxide electric field, and hence fluctuation in bias temperature instability (BTI) characteristics (both NBTI and PBTI). We modify the existing NBTI and PBTI models in order to accurately characterize the BTI characteristics of the metal-gate devices...
FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, however, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based...
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