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We propose a new laser annealing process for forming P-Base-Junction P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junctionwith uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing...
Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel...
This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type,...
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