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Photonic weight banks employing multivariate statistical techniques could extend performance limits of multiantenna radio systems. We characterize the aggregate bandwidth penalty imposed by a silicon microring weight bank and assess application regimes for multivariate RF photonics.
We demonstrate a microwave photonic Interference canceller with a balanced architecture capable of relative-intensity noise suppression. Experimental results show that the system can cancel > 25 dB interference over 200 MHz instantaneous bandwidth and tune over a frequency range of 2–8 GHz.
Microring weight banks enable novel analog processing approaches in integrated photonics. Incorporating multivariate statistical techniques, microring weight banks can implement wideband, analog dimensionality reduction. We demonstrate principal component analysis of three 1GHz signals performed in a silicon microring weight bank.
A same-channel full duplex radio demonstrated >22 dB of interference rejection improvement with the addition of a microwave photonic self-interference canceller in the RF front end. The radio was operated at both 2.2 GHz and 2.46 GHz while using the same microwave photonic canceller.
We propose and experimentally demonstrate an optical self-interference cancellation system to realize full-duplex spectrum sensing in cognitive radios. The optical system is an analog radio-frequency front-end module, which cancels in-band self-interference, enabling a radio to simultaneously transmit and receive signals. The system achieves 83 dB of narrowband interference cancellation, and 60 dB...
A quad-band 2.5G SoC integrates all the RF, DSP, ARM, audio and other baseband processing functions into a single 65nm CMOS die. The radio draws a battery current of 49mA in the RX-mode, and 86mA in the GMSK TX-mode. The low-IF receiver achieves a sensitivity of -110dBm at the antenna, corresponding to a noise figure of 2.4dB at the device input. The 8PSK ±400kHz modulation mask is -64.1/62.7dBc for...
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non...
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