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An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected Air-bridge Field Plate (AFP) is simulated, optimized and experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. The fabrication process is based on a commercially available RF GaN on SiC technology. Device characteristics for...
An AlGaN/GaN high-electron-mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is proposed. The device features a metal field plate (FP) that jumps from the source over the gate region and lands between the gate and drain. The fabrication process is based on a commercially available radio-frequency GaN-on-SiC technology. Device characteristics for this work were optimized...
This paper presents a breakdown voltage enhancement technique for power AlGaN/GaN HEMTs by using novel Air-bridge Field Plate (AFP). The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. Simulation results show that the HEMTs with Air-bridge Field Plate can provide a new degree of freedom to modulate the device surface electric field...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 mOmegaldrmm2 and Figure of Merit (RontimesQg) of 8.4 mOmegaldrnC with optimized metal layout. This novel device also shows good Hot Carrier Injection (HCI) immunity.
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