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An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected Air-bridge Field Plate (AFP) is simulated, optimized and experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. The fabrication process is based on a commercially available RF GaN on SiC technology. Device characteristics for...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
This paper presents a high voltage AlGaN/GaN HEMTs with remarkable breakdown voltage enhancement by introducing a magnesium doping layer under the 2-DEG channel. The surface electric field is distributed more evenly when compare to a conventional device structure with the same dimensions. This is primarily due to the presence of a charge balanced magnesium doping layer acting as a floating field plate...
Increasing seed oil content is an important breeding goal for Brassica napus L. (B. napus). The identification of quantitative trait loci (QTL) for seed oil content and related traits is important for efficient selection of B. napus cultivars with high seed oil content. To get better knowledge on these traits, a molecular marker linkage map for B. napus was constructed with a recombinant inbred lines...
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