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Plasmonic nanolasers have made rapid progress in recent years, with room temperature lasing being achieved in the ultra-violet to visible wavelength range using ZnO, GaN and CdS semiconductors. However, the binding energy of excitons for semiconductors such as GaAs that emit in the technologically important near infrared region is insufficient to be stable at room temperature. Quantum dots act as...
A 1.3-µm InAs/GaAs quantum dot laser on a silicon-on-insulator waveguide structure with a threshold current density of 300 A/cm2 and lasing temperatures greater than 100°C is fabricated by direct wafer bonding and layer transfer.
High temperature operation of a quantum dot laser integrated with a silicon waveguide on a SOI wafer was demonstrated for the first time. Up to 100°C temperature, output power sufficiently high to achieve an optical error free link was obtained.
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