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Effect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al2O3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al2O3 and Si substrates. Nevertheless, GaN films with two‐dimensional surface were obtained on both ASF buffer layers on Al2...
We investigated the reduction of the large reverse‐bias leakage current in GaN‐based Schottky diodes using the aluminum facepack technique, which involves the evaporation of aluminum onto the nitride surface, the subsequent oxidation of the Al film in air, and its removal by a wet‐etching technique. The reduction of the reverse‐bias leakage current was due to the mask effect of the facepack, which...
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