The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Effect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al2O3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al2O3 and Si substrates. Nevertheless, GaN films with two‐dimensional surface were obtained on both ASF buffer layers on Al2...
A (GaN/AlN) alternating-source-feeding (ASF) buffer layer was introduced in the molecular beam epitaxy (MBE) growth of GaN film on (111) Si substrate. Residual strain in the GaN film was reduced by using the ASF buffer layer.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.