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This paper describes a route toward quantum state manipulation by using twin InSb/GaAs quantum dots (QDs) as building blocks. The discussion on the advantage of staggered (type-II) band alignment in InSb/GaAs heterojunction is given first. For the generation of coupled/entangled electronic state, symmetric twin is desired. However, asymmetric twin is typically expected from the fabrication point of...
Uplink is one of the challenging tasks that limits the practicality and marketability of visible light communication (VLC) in indoor environments. In this paper, we propose a low-speed communication system using a surveillance camera on the ceiling to communicate with an infrared light emitting diode (IR-LED) at a lower level for uplinks using the Nyquist sampling method. Such system can avoid glare...
The paper reports an theoretical investigation on the effects of material intermixing in epitaxial Ga(As)Sb/GaAs quantum dots (QDs). Conditions of type-II band alignment of Ga(As)Sb/GaAs is considered. The fabrication of Ga(As)Sb/GaAs QDs by molecular beam epitaxy is briefly described. Finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered...
GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1−xAs (x = 0.07, 0.15, 0.20 and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical properties of the GaSb QDs. The density of GaSb QDs grown is approximately 1.2–2.8×109cm−2 on InGaAs insertion layers which depends on the In-mole-fraction...
Visible light communication (VLC) using white-light emitting diode (LED) is gaining increasing attention and considered as an alternative to overcome drawbacks of radio frequency (RF) communication technology. In order to deal with mobility in indoor VLC systems, sufficient overlap areas of adjacent LEDs are required for successful handover. In this paper, we propose a configuration method of LEDs...
The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain...
We use energetic arguments to describe a scenario of self-assembled InP quantum dot (QD) formation during crystallization of indium nanodroplet. Competition between strain energy and surface energy of a homogeneous circular ring and a ring-shaped QD molecule results in QD formation at critical ring size. From the described process, we expect to extend our ability to realize complex nanostructures,...
Semiconductor quantum dots (QDs) with excellent structural, optical and electronic properties can be easily fabricated by the self-assembled Stranski-Krastanow growth mode. However, in spite of numerous efforts and encouraging results, it has become clear that the bottom-up approach alone can not yield QDs with deterministically controllable electronic properties. Post-growth processing seems at present...
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