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Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving...
In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson's equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared...
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poissonpsilas equation with dopant, mobile, and the trap charge terms is first solved to obtain accurate yet continuous channel potentials physically. An analytic non-charge-sheet drain current...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
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