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In this letter, we report on polarization charge engineering enabling normally-off operation for a double-heterostructure Al0.26Ga0.74N/GaN/Al0.07Ga0.93N-based field effect transistors (DHFETs) using a 35-nm-thick undoped GaN layer underneath the gate metallization. The combined effect of the negative polarization charge induced by the AlGaN back barrier and the undoped GaN gate layer ensures the...
AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching are investigated in this paper. A design study for a fast switching environment for power devices is provided including an analysis of the technology, the fabrication, and the performances of large-area AlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and the results are being...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term reverse bias step stress tests. Increases of leakage current and dynamic Ron resistance have been found. This degradation is possibly caused by the formation of localized defects which have been observed by backside electroluminescence imaging. In addition the effect of device layout and substrate material...
Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8x60 μm wide and 0.5 μm long AlGaN/GaN HEMTs at a drain voltage of Vd=50V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the...
AlGaN/GaN HEMTs on various substrates have raised a lot of interest for the application in future high-efficiency base station systems for next generation mobile communication, currently dominated by LDMOS technology. Using GaN technology in a transmitter, infrastructure equipment manufacturers will benefit from major improvements in system performance and flexibility. AlGaN/GaN HEMTs enable innovative...
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