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A fitting model is developed for accounting the asymmetric ambipolarities in the $I$ –$V$ characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can...
A fitting model is developed for an I–V characteristic of a graphene field-effect transistor (G-FET) with asymmetry about the Dirac voltage, originated from the thermionic emission and interband tunneling at junctions between the gated and access regions. We apply the model to a top-gated G-FET with graphene grown on a SiC substrate and with SiN gate dielectric, and we demonstrate that it can excellently...
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