The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm2/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement...
In this paper, we built potential and current models for quadruple-gate junctionless filed-effect transistor (QGJLFET) in subthreshold regime. A new potential distribution function is provided for the cross section of QGJLFETs, based on which we derived a more accurate expression of natural length for QGJLFETs. The result shows that a quadruple-gate FET is far more than a simple composition of two...
FinFET device, the promise one of all candidates which may extend CMOS scaling to 10nm and beyond, has attracted intensive research interest in recent years. In paralleling the process technology and circuit design methodology, a compact model which serves as a link between the process technology and circuit design is strongly demanded. In this paper, we first review the FinFET process technology...
Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of...
Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection...
In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (R-G) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.