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This paper proposes a double-end sourced layout for multichip SiC MOSFET power module adopting conventional wire-bonded packaging technology. The unique design provides each MOSFET with two parallel commutation loops by incorporating a symmetrical pair of dc-bus terminals into the power module. This new layout provides symmetrical equivalent power loops to each paralleled MOSFET and thus enables consistent...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
This paper proposes a wire-bonded design with a unique double-end sourced structure for multi-chip paralleled SiC power modules. The proposed design achieved a reduced power-loop inductance of 7.2 nH, while inheriting the advantages of the conventional wire-bond technology. More importantly, the symmetrical structure of the proposed design brought consistent performances to the paralleled devices...
In this paper, a hybrid switch (HyS) consisting of a large silicon (Si) IGBT die in parallel with a small wide bandgap (WBG) die is proposed for generic power conversion drives. This HyS produces an inherent better conduction performance compared to the Si IGBT and WBG. A gate control option is recommended for minimum switching losses and switching frequency as high as 78 kHz can be achieved in HyS...
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to source the power module from the two ends, not only shortens the equivalent power loops but also provides a symmetrical structure for the paralleled devices. The proposed design achieved...
In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work...
Over the past ten years, there has been increased incorporation of electronic power processing into alternative, sustainable, and distributed energy sources, as well as energy storage systems, cars, airplanes, ships, homes, data centers, and the power grid. The goals have been to reduce the size, weight, and maintenance and operational costs of these power systems, while increasing overall energy...
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