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P-type Schottky barrier nanowire transistors (p-SB-NWTs) are computational studied in this paper. We analyzed the working principle and physical limits on their performance in details. The impact of Schottky contact of SB-NWTs on the current drivability, gate control and RF performance are studied comparing with conventional silicon nanowire transistors (SNWTs). It is pointed out that the inferior...
LFN in nSNWTs realized with top-to-down process is studied and analyzed in this paper. Correlated-mobility fluctuation model can explain the LFN behavior at low drain current, while significant noise enhancement is observed at high current region due to the impact of parasitic resistance of the ultra-narrow SDE regions in the nanowire transistors. Design optimizations to reduce the resistance impact...
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