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An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current Ith of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 Ith.
Membrane BH-DFB lasers emitting in 1500-1600 nm wavelength are realized with an air-bridge structure, and continuous wave operations up to moderately high temperature (80degC) were achieved under an optical pumping. The thermal resistance was estimated to be 11 K/mW, which is half that of membrane BH-DFB lasers fabricated by bonding on BCB coated InP substrate.
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