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Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing...
We have demonstrated that an etched feature as small as 10×10 nm was realized on n-GaAs surfaces in a Ni-salt solution by using a scanning tunnelling microscope (STM). Injected carriers from the tip were responsible for the local anodic etching. In the same solution, we deposited a micron-size Ni island on n-GaAs. An electric field between the tip and the substrate induced the local Ni deposition.
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