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Semiconductor membrane laser with high index-contrast waveguide is promising for achieving low power consumption operation. As a step to realize a current injection (LCI) type membrane laser, GaInAsP/InP lateral current injection type Fabry-Perot lasers with 400 nm thin core layer, including compressively-strained 5 quantum-wells were realized by 2-step OMVPE regrowth on a semi-insulating InP substrate...
Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.
Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.
A room-temperature continuous-wave operation under optical pumping was demonstrated with GalnAsP/InP membrane DFB lasers prepared on an SOI substrate integrated with a rib-waveguide structure. A threshold pump power of 11.3 mW and a sub-mode suppression ratio of 29 dB were obtained with a cavity length of 140 mum and a stripe width of 1.5 mum. Light output was obtained through the SOI waveguide of...
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