The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present an extensive characterization of carbon nanotube (CNT) via interconnects grown under various conditions, with particular focus on contact resistance. Si process-compatible elements Ti, Cr, and Al are used as underlayer metals, together with the two most effective catalysts Ni and Fe, to study the growth behaviors and contact resistances of vertically aligned CNTs. The CNT via test structure...
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
We present temperature-dependent electrical characteristics of vertically aligned carbon nanofiber (CNF) arrays for on-chip interconnect applications. The study consists of three parts. First, the electron transport mechanisms in these structures are investigated using I-V measurements over a broad temperature range (4.4 K to 350 K). The measured resistivity in CNF arrays is modeled based on known...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.