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In this paper, the fluctuation of random interface traps (RITs) and its interaction with random dopants of 22-nm junctionless FETs (JL-FET) with high-/metal gate (HKMG) are investigated with 3-D statistical TCAD simulations. The impacts of RIT and random dopant fluctuation (RDF) on the performances of JL-FET are evaluated separately and together. The results show that acceptor-like interface traps...
Lightly doped or even intrinsic channel can be used in SOTB MOSFETs and therefore very Low RDF (random dopant flunctuation) can be expected in such devices. In this work, we systematically investigated the influences of the intrinsic parameter fluctuations, including LER (line-edge-roughness), STV (silicon thickness variation) and WFV (metal-gate work-function variation), on 20nm-gate intrinsic SOTB...
3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20 nm FinFETs SRAMpsilas sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under...
Summary form only given. Through full 3D simulation, we evaluate the impact of gate LER mainly focuses on device parameters including SS, DIBL and Ioff. The variation of the device performance increases when rms amplitude or correlation length increases. Also our results show that gate LER become an urgent issue when the channel length decreases into sub-30nm.
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