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Here, the utilizing of lateral unidirectional bipolar-type insulated-gate transistors (Lubistors) for pH detection was demonstrated for the first time. The high on current and ambipolarity of Lubistors are favorable properties for reliable sensing application. The ultrathin Lubistors were fabricated on 20-nm-thick SOI substrates in planar geometry. The triode-like current-voltage characteristic and...
A field effect transistor (FET) sensor for pH detection was developed based on CMOS-compatible silicon nanowires. Optical lithography and anisotropic self-stop etching were employed to guarantee low cost and batch production for silicon nanowires. The pH nanosensor can detect the change of the hydrogen ion concentration effectively. In addition, it is demonstrated that the back gate electrode can...
Development of miniaturized devices that enable rapid and direct recognition of small molecules has become a growing research area in various fields of nanotechnology. Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally demonstrated for direct, label free, highly selective, and real-time detection of biological and chemical targets at very low concentrations. The detection...
Silicon nanowires (SiNWs) fabricated by MEMS technology and its DC response to antigen (HBsAg) was demonstrated in this paper. Anisotropic self-stop etching was employed to ensure low cost batch production. Electrical characterization revealed that, field effect of such device, with SiNWs' width and thickness in the order of 10 nm, guaranteed linear resistance modulation in a wide range, which made...
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