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A differential linear TIA implemented in a 130 nm SiGe: C BiCMOS technology with ft/fmax/BVcEo of 300 GHz/500 GHz/1.7 V is presented. It features a bandwidth of 60 GHz, 62.5 dBO differential transimpedance gain and 5.46 pA/√Hz averaged input-referred current noise density, while dissipating 85 mW of DC power. The measured THD is better than 3% for ∼ 450 mVppd output swing and input current of 400...
In this paper, a linear driver for optical modulators in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300/500 GHz is presented. The driver is implemented following a distributed amplifier topology in a differential manner. In a 50-Ω environment, the circuit delivers a maximum differential output amplitude of 4 Vpp, featuring a small-signal gain of 13 dB and 3-dB bandwidth of 90 GHz. Time-domain...
This paper presents the design and characterization of a monolithically integrated optical transmitter fabricated in the 0.25 µm SiGe:C BiCMOS EPIC technology of IHP. The prototype comprises a 15-segment depletion-type Si Mach-Zehnder modulator (MZM) with total length of 5.67 mm and multichannel driver amplifier exhibiting integrated 4-bit digital-to-analog converter (DAC) functionality. In 2-bit...
In this work, a modulator driver in a 0.25 µm SiGe:C complementary BiCMOS technology with fT/fmax of 110 / 180 GHz for the npn and 95 / 140 GHz for the pnp transistor is presented. The driver is implemented following an H-bridge topology, taking advantage of the availability of the pnp HBTs, and delivers a differential output amplitude of 3 Vpp to a 50 Ω load. Clear eye diagrams up to 28 Gb/s are...
This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
In this work, a monolithically integrated segmented driver and Mach-Zehnder modulator (MZM) in 0.25 µm SiGe:C BiCMOS technology is presented. The driver and the modulator are divided in 16 segments and the MZM has a total length of 6.08 mm. The driver has a maximum gain of 14.5 dB. Electro-optical time-domain measurements were performed and an optical eye-diagram with more than 13 dB of extinction...
In this work, a modulator driver in 0.13 µm SiGe:C BiCMOS technology for 25 Ω travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) is presented. The design integrates two channels for differential driving of IQ signals. The driver delivers a differential output signal of 4 Vpp, exhibits a differential gain of 12 dB and has an output return loss better than 9 dB. It works from a 4.7 V supply...
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