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A 65-nm CMOS IC containing a synthesizer, a continuous-time bandpass delta-sigma ADC and associated digital filter digitizes 200–400 MHz inputs with bandwidths up to 100 MHz. With the ADC clock supplied by the internal synthesizer, the observed phase noise on a 430-MHz carrier is −137 dBc/Hz at 750-kHz offset. The gain of the IC is adjustable over a 39-dB range using an LNA in parallel with a resistive...
The chemical bath deposition (CBD) of CdS layers on Cu(In,Ga)Se2 (“CIGSe”) absorbers on flexible polyimide substrates is examined using a combination of soft x-ray emission (XES) and photoelectron (XPS) spectroscopies. For this purpose, absorbers with with varying degrees of Cu-deficiency and NaF precursor thickness were studied. From the data, a detailed picture of the chemical surface composition...
The chemical and electronic structure of high-efficiency chalcopyrite thin film solar cell absorbers significantly differs between the surface and the bulk. While it is widely accepted that the absorber surface exhibits a Cu-poor surface phase with increased band gap (Eg), a direct access to the crucial information of the depth-dependency of Eg is still missing. In this paper, we demonstrate that...
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