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Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transistors and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.
Realization of high-efficiency optical device on Si integrated circuit is required for novel optoelectronic integrated circuit (OEIC)[1,2]. AlxGa1−xPN alloy, which can lattice-match to Si, is fascinating for realization of lasers on Si as schematically shown in Fig.1, because of its potentials of carrier and optical confinement at the heterointerface. In this study, development of GaPN/AlGaPN heterostructures...
A novel silicon interposer (SilP) BGA package (PKG) - SilP PKG - has been developed and qualified through test chip. It features three key process technologies; Cu-filled through Si via (TSV), fine pitch multi-layer wiring with Cu- plating, and micro-bump interconnect. The cost-conscious fabrication process flow has been developed based on the build-up print boards' Cu-plating technology and Si wafer...
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