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Cognitive computing - which learns to do useful computational tasks from data, rather than by being programmed explicitly - represents a fundamentally new form of computing. Unfortunately, Deep Neural Networks (DNNs) learn from repeated exposure to huge datasets, which currently requires extensive computation capabilities (such as many GPUs) working together over days or weeks of time. To accelerate...
Artificial neural networks (ANN) have revolutionized the field of machine learning by providing impressive human-like performance in solving real-world tasks in computer vision, speech recognition, or complex strategic games. There is a significant interest in developing non-von Neumann coprocessors for the training of ANNs, where resistive memory devices serve as synaptic elements. However, interdevice...
Artificial neural networks (ANN) have become a powerful tool for machine learning. Resistive memory devices can be used for the realization of a non-von Neumann computational platform for ANN training in an area-efficient way. For instance, the conductance values of phase-change memory (PCM) devices can be used to represent synaptic weights and can be updated in-situ according to learning rules. However,...
Machine Learning (ML) is an attractive application of Non-Volatile Memory (NVM) arrays [1,2]. However, achieving speedup over GPUs will require minimal neuron circuit sharing and thus highly area-efficient peripheral circuitry, so that ML reads and writes are massively parallel and time-multiplexing is minimized [2]. This means that neuron hardware offering full ‘software-equivalent’ functionality...
We assess the impact of the conductance response of Non-Volatile Memory (NVM) devices employed as the synaptic weight element for on-chip acceleration of the training of large-scale artificial neural networks (ANN). We briefly review our previous work towards achieving competitive performance (classification accuracies) for such ANN with both Phase-Change Memory (PCM) [1], [2] and non-filamentary...
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