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Machine Learning (ML) is an attractive application of Non-Volatile Memory (NVM) arrays [1,2]. However, achieving speedup over GPUs will require minimal neuron circuit sharing and thus highly area-efficient peripheral circuitry, so that ML reads and writes are massively parallel and time-multiplexing is minimized [2]. This means that neuron hardware offering full ‘software-equivalent’ functionality...
Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic “weight.” This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently...
We assess the impact of the conductance response of Non-Volatile Memory (NVM) devices employed as the synaptic weight element for on-chip acceleration of the training of large-scale artificial neural networks (ANN). We briefly review our previous work towards achieving competitive performance (classification accuracies) for such ANN with both Phase-Change Memory (PCM) [1], [2] and non-filamentary...
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