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The breakdown spots spatial distribution in metal gate/high-K/III-V semiconductor capacitors caused by severe electrical stress is investigated. The spots appear as a random point pattern on the top electrode and are the consequence of important thermal effects occurring at the very moment of the formation of filamentary leakage current paths across the gate oxide stack. The damage is permanent, easily...
A simple model for the leakage current decay in Al/HfYO x /GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie–von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal–insulator–semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective...
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