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AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize converter circuit control function and overcurrent protection of device itself, we have designed, fabricated, and experimentallymeasured the Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure...
The physical mechanism of fin-shaped tri-gate AlGaN/GaN Metal Insulator Semiconductor High Electron Mobility Transistors (Fin-MISHEMT) with Al2O3 gate oxide is studied with theoretical model derived and TCAD simulation verified. The relationship between its threshold voltage and fin-width is obtained. The theoretical model of the depletion effect of side gates is based on a two-dimensional Poisson...
In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC-DC buck converter design with integrated high-side gate driver and over-current protection based on AlGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-on and normally-off AlGaN/GaN...
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