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This paper presents an active 1:2 power divider built in a 35 nm InGaAs monolithic microwave integrated circuit (MMIC) technology. The circuit is based on a common-source transistor with an interstage matching at the drain connection to feed two parallel common-gate transistors. The measured gain is 3.6 dB with a 3 dB bandwidth of 100 GHz ranging from 200 to 300 GHz. Input and output return loss are...
In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation high-resolution imaging systems and communication links operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been developed by using an advanced 35 nm InAlAs/InGaAs...
For broadband signal generation in the high millimeter-wave range we present a frequency multiplier-by-eight MMIC. The measured output tuning bandwidth from 220 to 320 GHz almost covers the entire WR-03 waveguide band (220–325 GHz). On chip interstage and post amplification result in a maximum output power of 2.5 dBm at an output frequency of 260 GHz. Due to the high multiplication factor in-band...
Two fully integrated H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental down-conversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO power of only...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave frequency range up to 500 GHz. Based on these technologies, a variety of millimeter-wave monolithic integrated circuits (MMICs) has been realized employing grounded coplanar waveguides (GCPWs). To demonstrate the potential...
Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than 19 dB has been achieved with both mixers. The measured LO to RF isolation...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandwidth of more than 100 GHz has been successfully developed in a 50 nm mHEMT technology. The mixer achieves a measured conversion loss of 17 dB. The measured LO-to-RF isolation is better than 17 dB in the relevant frequency range. Two Lange couplers are used to balance the design. The IF signal is tapped...
A wideband 260 to 304 GHz (H-band) heterodyne receiver is formed by an MMIC chip set cascading a low-noise amplifier, resistive mixer with integrated frequency-doubler, LO power amplifier and frequency-multiplier-by-six. All MMICs use active circuit concepts and are realized in 100 and 50 nm gate-length metamorphic HEMT technology. The balanced active frequency-multiplier-by-six provides 0 dBm of...
This paper presents two low-noise amplifiers in D-band (110-170 GHz) using metamorphic high electron mobility transistor (mHEMT) technology with gate lengths of 100 nm and 50 nm for applications in passive millimeter-wave imaging. Both amplifiers consist of four transistor stages with a gate width of 2 × 15 μm, each. The chip sizes are 1.0 × 2.0 mm2. The circuit design and the impedance matching networks...
In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron...
In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron...
An experimental radar operating simultaneously at 10 GHz, 35 GHz, 94 GHz and 220 GHz has been developed, which is capable to deliver an instantaneous bandwidth of 4000 MHz at the lower frequency bands and 8000 MHz at 220 GHz. The radar is of FM-CW type and uses a chirp modulation. Two types of application have been envisaged, both to determine the scattering centre distributions of targets, one using...
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