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For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions...
This paper discusses an efficient method for simulation and modeling of three-dimensional (3-D) interconnections such as wire bonds and through-hole vias. The proposed method is based on the volume electric field integral equation (EFIE), and approximates current density distribution with cylindrical conduction mode basis functions (CMBF). The geometrical fitness and orthogonal property of the basis...
For the modeling of interconnect in three-dimensional packagings, this paper proposes a method based on the electric field integral equation (EFIE) with cylindrical conduction mode basis functions (CMBF). The bases are defined to describe arbitrary skin and proximity effects, and partial impedances are obtained from the formulation of the EFIE with CMBF's. Examples of several 3D interconnects verify...
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