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In this paper, a source/drain design for vertical channel nanowire FETs involving extension doping profile, spacer dielectric constant and spacer width is proposed and demonstrated by TCAD simulation. The results show that asymmetric graded lightly doped drain (AGLDD) exhibits excellent SCE controllability and driving capability even with relatively large nanowire diameter. By adopting high-k spacer...
The influences of compliance current (CC) introduced by transistor during the forming, set and reset operations on hafnium oxide based RRAM devices are investigated respectively. Experimental results show that CC during forming operation is more critical to RRAM performances than that in set/reset operations, indicating that the suppression of current overshoot issue is more important during forming...
In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020 cm−3 electrical concentration and about 1.75×10−6 ohm·cm2 contact resistivity have been achieved at P+ implantation of 10keV and 5×1014cm−2 and annealing condition of 600oC, 10seconds. The fabricated N+/P diode...
The organic resistance memories show great potentials for future flexible applications. In this paper the main challenges and typical recent progress of the organic resistance memory devices are discussed. A kind of single-component polymer resistance memory device based on polychloro-paraxylylene (parylene-C) is focused, with excellent chemical stability and high CMOS process compatibility as well...
The resistive switching behavior recently observed in silicon oxide (SiOX) makes this material attractive to embedded resistive random access memory (RRAM) fabrication due to process compatibility. In SiOX-based RRAM devices, switching mechanism is closely correlated with defects in the oxides. Therefore developing a method to control the defects is necessary for performance enhancement. In this paper,...
Suppressing the sneak current in the crossbar array is a great challenge for the high-density integration of RRAM. In this paper, a novel threshold switching selector device with the simple structure of Pt/TaOx/Pt is proposed for RRAM application. The measured data shows that this device exhibits good selector characteristics, such as tight cycle to cycle distribution of switching voltage, good resistance...
In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs...
This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed...
The ballistic efficiency and self-heating effects in gate-all-around silicon nanowire transistors (SNWTs) are experimentally investigated in this paper. A modified experimental extraction method for SNWTs is proposed, which takes into account the impact of source contact resistance. The highest ballistic efficiency is observed in sub-40 nm SNWTs at room temperature, demonstrating their intrinsic potential...
This paper has reported a programmable switch composed of copper-doped-SiO2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact...
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