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The industry's first 10nm low power high performance mobile SoC has been successfully ramped in production. Thanks to a thorough design-technology co-development, 10nm SoC is 16% faster, 37% smaller, and 30% lower power than its 14nm predecessor. The latest SoC features a gigabit class modem and is set to advance AR/VR, AJ, machine learning, and computing. 10nm FinFet technology scaling challenges...
A novel Dynamic Carrier-Storage IGBT (DCS-IGBT) is proposed. With Gate (hereinafter, G) and Control Gate (hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current...
In order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length Lg, the gate-source space Lgs, the gate-drain space Lgd, and the thickness of barrier AlGaN on frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs) using silvaco TCAD simulation. Besides, the importance of Ohmic contact resistance Rc to current-gain cutoff...
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