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The parasitic capacitances in Vertical FET(VFET) are investigated. Vertical device has additional parasitic capacitance compared with lateral device because of deeply contacted drain metal. This parasitic capacitance degrades the performance of the device. In this study, tri-gate channel VFET which eliminates the additional parasitic capacitance without broadening the device area is proposed.
In this work, we compare parasitic components between lateral nanowire-FET (LFET) and vertical nanowire-FET (VFET) based on ITRS 2015 using 3D Technology Computer-aided Design (TCAD). We compare the parasitic resistances and capacitances in accordance with channel thickness. Further, we analyzed the effects of parasitic components on device performance and proposed the direction of device scaling.
In this paper, the dual-k spacer of nanowire-FET is investigated using a variety of materials compared with single spacer. The proposed structure shows significant improvement of delay characteristics and better electrostatic controllability than those of single spacer.
In this paper, we have investigated RC delay not only on single channel but also on multi-channels in lateral FET (LFET) and vertical FET (VFET). It has verified that there is always constant for SCEs regardless of the number of channels. Since all structures have the same gate length and spacer length, they have the same gate controllability. On the other hand, RC delay depends on the structure....
Self-heating effects (SHEs) were studied on the vertical nanoplate-shaped gate-all-around (GAA) FETs (vNPFETs) as a target of 5nm node technology. The thermal properties are compared between face-up and face-down configuration. Decreasing the channel width is vulnerable to both configurations in terms of SHEs due to the reduced area of heat dissipation. It is well known that the SHE is alleviated...
In this paper, the Self-Heating Effects in Vertical FETs(VFET) have been investigated according to device geometry. It is demonstrated that the temperature of the device increases by using a low-k dielectric and an air gap between the metal lines. In addition, when air spacers are used, the lattice temperature is further increased and the on current reduction ratio increases compared to the common...
Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated...
Device characteristics in the operating region, subthreshold region, and OFF region were analyzed to propose optimum design guideline for nanowire FET. First, the research was focused on the structure of extension region in perspective of RC delay. Also, Subthreshold Swing (SS) and Gate Induced Drain Leakage (GIDL) were investigated because these characteristics are greatly affected by the structure...
In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.
In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ Vht). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided...
In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit...
In this paper, dynamic Vpass ISPP schemes and optimizing Vth of erase cells are presented for achieving high program inhibition of sub-40nm MLC NAND flash and beyond. Compared to conventional method, over 40% program failure reduction after 30k P/E cycling was achieved in the proposed scheme. By optimizing erase Vth and its distribution using ISPP-after-erase, about 2 times better Vpass window margin...
Recently, 3-dimensional (3D) memories have regained attention as a potential future memory solution featuring low cost, high density and high performance. We present a 3D double stacked 4Gb MLC NAND flash memory device with shared bitline structure, with a cell size of 0.0021mum2/bit per unit feature area. The device is designed to support 3D stacking and fabricated by S3 and 45nm floating-gate CMOS...
A modified SCR (silicon controlled rectifier) is proposed as an ESD protection for high speed signaling systems. With low voltage triggering (LVT) characteristics and good turn-on uniformity, the proposed SCR scheme accomplishes both goals, high discharging capability and Cin (input capacitance) reduction. The fabricated chips with the new ESD scheme passed the severe package level EOS test conditions...
A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths
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