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Behavioral models of semiconductor devices have been widely implemented in simulation tools because they have simple structures and easy parameter extraction procedures. However, the IGBT behavioral model is more complicated than that of the MOSFET because the BJT structure exhibits charge storage phenomenon, such as the tail current. In this paper, a simple IGBT behavioral model with easy parameter...
Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional...
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