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Behavioral models of semiconductor devices have been widely implemented in simulation tools because they have simple structures and easy parameter extraction procedures. However, the IGBT behavioral model is more complicated than that of the MOSFET because the BJT structure exhibits charge storage phenomenon, such as the tail current. In this paper, a simple IGBT behavioral model with easy parameter...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
In high-speed aircraft, an altitude adjustment system is an important auxiliary part that needs rapid power support. In this paper, an ultrahigh-speed generator is described. However, the ultrahigh-speed generator's safe operation and smooth power supply to the load can be threatened by mismatch between the open-loop generator and fickle load conditions. In this study, a power converter with a paralleled...
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