Behavioral models of semiconductor devices have been widely implemented in simulation tools because they have simple structures and easy parameter extraction procedures. However, the IGBT behavioral model is more complicated than that of the MOSFET because the BJT structure exhibits charge storage phenomenon, such as the tail current. In this paper, a simple IGBT behavioral model with easy parameter extraction procedure and wide temperature range is proposed to estimate hard switching loss at different operation conditions. A tail current module is implemented so that the estimation of turn-off loss becomes more accurate. The switching performance of the proposed model is validated at different voltages, currents, gate resistance and temperatures.